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2SD1879 [Wing Shing]

SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION); 硅扩散型功率晶体管（概述）
2SD1879
型号： 2SD1879
厂家： WING SHING COMPUTER COMPONENTS    WING SHING COMPUTER COMPONENTS
描述：

SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)
硅扩散型功率晶体管（概述）

晶体 晶体管
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中文：  中文翻译
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2SD1879  
SILICON DIFFUSED POWER TRANSISTOR  
GENERAL DESCRIPTION  
Highvoltage,high-speed switching npn transistors in  
a plastic envelope with integrated efficiency diode ,  
primarily for use in horizontal deflection circuites of  
colour television receivers  
TO-3PML  
QUICK REFERENCE DATA  
SYMBOL  
VCESM  
VCEO  
IC  
PARAMETER  
CONDITIONS  
MIN  
MAX  
1500  
600  
6
UNIT  
V
Collector-emitter voltage peak value  
Collector-emitter voltage (open base)  
Collector current (DC)  
VBE = 0V  
V
A
Collector current peak value  
Total power dissipation  
Collector-emitter saturation voltage  
Collector saturation current  
Diode forward voltage  
12  
A
ICM  
Ptot  
VCEsat  
Icsat  
VF  
Tmb 25  
60  
W
V
IC = 5.0A; IB = 1.0A  
f = 16KHz  
5
A
IF=5.0A  
1.5  
1.0  
V
Fall time  
IC=4A,IB1=-1/2IB2=0.8A,VCC=100V  
s
tf  
LIMITING VALUES  
SYMBOL  
VCESM  
VCEO  
VEBO  
IC  
PARAMETER  
CONDITIONS  
MIN  
MAX  
1500  
600  
5
UNIT  
V
Collector-emitter voltage peak value  
Collector-emitter voltage (open base)  
Emitter-base voltage(open collector)  
Collector current (DC)  
VBE = 0V  
V
V
6
A
Base current (DC)  
2
A
IB  
Base current peak value  
Total power dissipation  
Storage temperature  
4
A
IBM  
Ptot  
Tstg  
Tj  
Tmb 25  
60  
W
-55  
150  
150  
Junction temperature  
ELECTRICAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
MAX  
1.0  
UNIT  
mA  
Collector-emitter cut-off current  
VBE = 0V; VCE = VCESMmax  
VBE = 0V; VCE = VCESMmax  
Tj = 125  
ICE  
ICES  
2.0  
mA  
Collector-emitter sustaining voltage  
IB = 0A; IC = 100mA  
L = 25mH  
V
VCEOsust  
Collector-emitter saturation voltages  
Base-emitter satuation voltage  
DC current gain  
IC = 5.0A; IB = 1.0A  
IC = 5.0A; IB = 1.0A  
IC = 1.0A; VCE = 5V  
IF=5.0A  
5.0  
1.5  
30  
V
V
VCEsat  
VBEsat  
hFE  
VF  
fT  
Cc  
8
3
Diode forward voltage  
1.5  
V
MHz  
pF  
s
Transition frequency at f = 1MHz  
Collector capacitance at f = 1MHz  
Switching times(16KHz line deflecton circuit)  
Turn-off storage time Turn-off fall time  
IC = 0.1A; VCE = 10V  
VCB = 10V  
IC=4A,IB1=-1/2IB2=0.8A,VCC=100V  
C=4A,IB1=-1/2IB2=0.8A,VCC=100V  
ts  
tf  
1.0  
s
Wing Shing Computer Components Co., (H.K.)Ltd.  
Homepage: http://www.wingshing.com  
Tel:(852)2341 9276 Fax:(852)2797 8153  
E-mail: wsccltd@hkstar.com  

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